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IGBT
Insulation Gate Bi-polar Transistor
Wafer with Back Metal Plating
Experimental use in Lab
For optimizing heat dissipation
EV (Electric Vehicle) and HEV (Hybrid Electric Vehicle)
 

Click for Questionnaire

 Quick Specs:
Wafer Material: Si, GaN and SiC
Die size 5mm to 25mm

Use and Applications:
Laboratory testing of IGBT Wafer and Die
Evaluation
Prototype
Optimization

Availability:
Stock to 4 weeks
 
Part Numbering System
TD 1 - 12.5 - DC - BG150 W ###
Wafer Material Nbr Pads
Per Die		   Die
Size (mm)		   Patterns   Back Grind
Die
Thickness (µm)		 Packaging ID
Number
Si Silicon:
TD = Single Die
TDW = Sawn Wafer
TDWU = Unsawn Wafer

GaN Gallium Nitride:
GaN = Single Die
GaNW = Sawn wafer
GaNWU = Unsawn wafer

SiC Silicon Carbide:
SiC = Single Die
SiCW = Sawn wafer
SiCWU = Unsawn wafer

 1~999   Square Example
5.0 = 5.0x5.0mm
12.5 = 12.5x12.5mm
Other sizes available


Rectangular Example:
8x5= X8mm x Y5mm
5x8= X5mm x Y8mm
Other sizes available		   DC = Daisy Chain

BUS = Fully Plated

ISO = Isolated Pads

FA = Full Array

Blank = Isolated
or Fully Plated		   100µm
~500µm		 Single Die:
W = 2" Waffle Pack
P = 4" Waffle Pack
T = JEDEC Tray
E = Tape & Reel

Unsawn Wafer:
C = Cassette
J = Jar/Canister

Sawn Wafer:
NT8 = Dicing Tape 8" Ring
NT12 = Dicing Tape 12" Ring
UV8 = UV Tape 8" Ring
UV12 = UV Tape 12" Ring		 3~6 Digit
Unique
Number
Notes: Customer must complete questionnaire specifying wafer requirements such as:
Wafer Material (Si, GaN or SiC), Wafer thickness (µm), Plating and Sputtering Alloys
Plating Thickness, Back Grind Mesh Number, back-face laser annealing, etc
 
 


IGBT Wafer/Die Questionnaire
 
Wafer Material: [ ] Si
Silicon		 [ ] GaN
Gallium Nitride		 [ ] SiC
Silicon Carbide		    
Die Size: ________ mm x

________ mm		        
Die Thickness: ________ µm        
Back Grind Mesh: [ ] #600 Other ________      
Layer 1:
(sputter)		 [ ] Ti Other ________ Layer 1
Thickness:		 [ ] 1000Å Other ________
Layer 2:
(sputter)		 [ ] Ni Other ________ Layer 2
Thickness:		 [ ] 1000Å Other ________
Layer 3:
(plating)		 [ ] Ni Other ________ Layer 3
Thickness:		 [ ] 2.0 ~ 5.0µm Other ________
Layer 4:
(plating)		 [ ] Au

[ ] Sn		 Other ________ Layer 4
Thickness:		 [ ] 0.1 ~ 0.3µm Other ________
Wire Bond Pad:
 [ ] None [ ] Daisy Chain Pad size

_____ x ______µm		 Nbr Pads

________		 Pad Pitch

________ µm
 
Related Links:
Wafer   Test Die   Dummy Die   Flip Chip  


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