3-Rows Pads Silicon Test Die Wire Bondable   More Die   Flip Chips   Bumped Die   Embedded Die   Dummy Wafers   IGBT Wafers   More Products   Home PDF Version   Silicon Test Die Variety of Wire Bondable Patterns   Quick Guide:  Copper (Cu) Wire Bonding  •   Gold (Au) Wire Bonding     Silicon Die with 3-Rows of Bonding Pads Total I/O Pads Perimeter Rows Pad Size µm Size (mm) Die Thickness Metalization over SiO2 Tray Qty Part Number Click Photo to Enlarge 380 3-Rows 50SQ,90SQ 175x55 5x3.25mm 300,500,750µm Al 1.0µm 144 TD380-5x3.2-BG300P TD380-5x3.2-BG500P TD380-5x3.2-BG750P 525 3-Rows 50SQ,90SQ 175x55 5x6.5mm 300,500,750µm Al 1.0µm 121 TD525-5x6.5-BG750P 670 3-Rows 50SQ,90SQ 175x55 5x10mm 300,500,750µm Al 1.0µm TBA TD670-5x10-BG750P 815 3-Rows 50SQ,90SQ 175x55 5x13mm 300,500,750µm Al 1.0µm TBA TD815-5x13-BG750P 960 3-Rows 50SQ,90SQ 175x55 5x16mm 300,500,750µm Al 1.0µm TBA TD960-5x16-BG750P 615 3-Rows 50SQ,90SQ 175x55 10x3.25mm 300,500,750µm Al 1.0µm TBA TD615-10x3.2-BG750P 760 3-Rows 50SQ,90SQ 175x55 10x6.5mm 300,500,750µm Al 1.0µm 49 TD760-10x6.5-BG750P 905 3-Rows 50SQ,90SQ 175x55 10x9.75mm 300,500,750µm Al 1.0µm 49 TD905-10x10-BG750P 1050 3-Rows 50SQ,90SQ 175x55 10x13mm 300,500,750µm Al 1.0µm 25 TD1050-10x13-BG750P 1195 3-Rows 50SQ,90SQ 175x55 10x16mm 300,500,750µm Al 1.0µm TBA TD1195-10x16-BG750P 1340 3-Rows 50SQ,90SQ 175x55 10x19mm 300,500,750µm Al 1.0µm TBA TD1340-10x19-BG750P 995 3-Rows 50SQ,90SQ 175x55 15x6.5mm 300,500,750µm Al 1.0µm TBA TD995-15x6.5-BG750P 1140 3-Rows 50SQ,90SQ 175x55 15x9.75mm 300,500,750µm Al 1.0µm 25 TD1140-15x10-BG750P 1285 3-Rows 50SQ,90SQ 175x55 15x13mm 300,500,750µm Al 1.0µm 25 TD1285-15x13-BG750P 1430 3-Rows 50SQ,90SQ 175x55 15x16mm 300,500,750µm Al 1.0µm 16 TD1430-15x16-BG750P 1575 3-Rows 50SQ,90SQ 175x55 15x19mm 300,500,750µm Al 1.0µm 16 TD1575-15x19-BG750P 1520 3-Rows 50SQ,90SQ 175x55 20x13mm 300,500,750µm Al 1.0µm 9 TD1520-20x13-BG750P 1665 3-Rows 50SQ,90SQ 175x55 20x16mm 300,500,750µm Al 1.0µm 9 TD1665-20x16-BG750P 1810 3-Rows 50SQ,90SQ 175x55 20x19mm 300,500,750µm Al 1.0µm 9 TD1810-20x19-BG750P 1950 3-Rows 50SQ,90SQ 175x55 20x23mm 300,500,750µm Al 1.0µm 9 TD1950-20x23-BG750P 1750 3-Rows 50SQ,90SQ 175x55 25x13mm 300,500,750µm Al 1.0µm TBA TD1750-25x13-BG750P 1900 3-Rows 50SQ,90SQ 175x55 25x16mm 300,500,750µm Al 1.0µm TBA TD1900-25x16-BG750P 2050 3-Rows 50SQ,90SQ 175x55 25x19mm 300,500,750µm Al 1.0µm TBA TD2050-25x19-BG750P 2200 3-Rows 50SQ,90SQ 175x55 25x23mm 300,500,750µm Al 1.0µm 9 TD2200-25x23-BG750P 2300 3-Rows 50SQ,90SQ 175x55 25x26mm 300,500,750µm Al 1.0µm 9 TD2300-25x26-BG750P Back grind die thickness 250~750um. Seed Layer Ti 300Å Other Sizes available  • Custom pad sizes and geometries available. Packaging: 2" Waffle Pack (W) • 4" Waffle Pack (P)  • Wafer Ring (NT12) • Tape and Reel (E) • JEDEC Tray (T) Conductive Metallization available: Al, AlS, Al-Si-Cu, Al-Cu, Al-Si, Cu, Ru, Pd, Pt, Au, Ag, Ni, Co, a-Si, and NiSi Refractory Metallization available: Ta, TaN, Ti, TiN, TiW, W, WN, WSi, Cr     JEDEC Moisture Sensitivity Level MSL-1   About Dielectric Materials: Silicon-dioxide insulator SiO2 k = 4.2 • Application: Gold and aluminum wire bonding Low-k Dielectric k < 3.0 • Application: Copper wire bonding and ultra-fine pitch pads < 90nm Competing Low-k process technologies: 1) Chemical vapor deposited (CVD) inorganic films such as carbon-doped oxides (SiOC) k~2.8 2) Spun-on dielectrics (SOD) - polymer organic films k 2.5~2.8 Challenge of bonding to pads with Low-k dielectrics: Spongy dielectric underlayer layer causes top metallization layer to cup and deflect, thus lowering optimal bondability. Package Selector Part Numbering System TD 380 - 5x3.2 - BG750 P Die Type Nbr Bonding Pads   Die Size (mm)   Backgrind Option Packaging Options TD=Singulated Die TDW = Sawn Wafer TDWU = Unsawn Wafer 380~2300 Other available   Rectangular Example: 5x3.2= X5mm x Y3.2mm Other sizes available   Example: BG750 = 750um (30mil) BG500= 500um (20mil) BG300 = 300um (12mils) Blank = Undefined Single Die: W = 2" Waffle Pack P = 4" Waffle Pack T = JEDEC Tray E = Tape & Reel Unsawn Wafer: C = Cassette J = Jar/Canister Sawn Wafer: NT8 = Dicing Tape 8" Ring NT12 = Dicing Tape 12" Ring UV8 = UV Tape 8" Ring UV12 = UV Tape 12" Ring Aluminum Pads: 1st Layer: SiO2 - 3000Å   •   2nd Layer: Ti - 300Å thick   •   3rd Layer: Al - 1.0µm thick  •   ( 1.0µm = 10000Å = 10KÅ) Copper and other pad platings available     Die Daisy Chain Numbering System    7       0       0380    Variations Packaging I/O Pads Thickness 3=300um 5=500um 7=750um Other Variations: Plating Materials etc. Single Die: 0 = 4" Waffle Tray (P) 5 = 2" Waffle Tray (W) 2 = Tape & Reel (E) Sawn Wafer Format: 3 = UV Tape & Ring ("U") 4 = Non-UV & Ring ("N") Unsawn Wafer Format: 7 = Clam Shell, Jar, etc To be Assigned: 1, 6, 8, 9 0380 = 380 pads 1575 = 1575 pads

	More Products   Home
TopLine Corporation 95 Highway 22 W Milledgeville, GA 31061, USA Toll Free USA/Canada (800) 776-9888 International: 1-478-451-5000  •  Fax: 1-478-451-3000 Email: sales@topline.tv ©2013 TopLine. All Rights Reserved. Home