Silicon Test Die
Wire Bondable
 
 
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Silicon Test Die
Variety of Wire Bondable Patterns
 
Quick Guide:  Copper (Cu) Wire Bonding  •   Gold (Au) Wire Bonding  •   Package Selector
 
Wire Bondable Die with Perimeter Daisy Chain (Al98% Si1% Cu1%)
Nbr
Pads
Pad Matrix Pitch Die Size
(mm)
Die
Thickness
Waffle Tray
Qty
5" (125mm)
Wafer Qty
Bondable
Pad
Single Die
Order Number
Unsawn Wafer
Order Number
Quick View
48 12x12
Single Row
Daisy Chain
457µm
18 mil
6.3mm
250 mil
100~635µm
4~25 mil
25 Die
2" Tray
236 Die
5" Wafer
ø102µm
4 mil
FCN48G6.3A457-DC FCWN48G6.3A457-DC
64 16x16
Single Row
Daisy Chain
254µm
10 mil
5.08mm
200 mil
100~635µm
4~25 mil
36 Die
2" Tray
340 Die
5" Wafer
ø95µm
3.7 mil
FCN64K5A254-DC FCWN64K5A254-DC
ø118µm
4.6 mil
FCN64N5A254-DC FCWN64N5A254-DC
ø150µm
6 mil
FCN64U5A254-DC FCWN64U5A254-DC
88 22x22
Single Row
Daisy Chain
204µm
8 mil
5.08mm
200 mil
100~635µm
4~25 mil
36 Die
2" Tray
340 Die
5" Wafer
ø80µm
3.1 mil
FCN88K5A204-DC FCWN88K5A204-DC
ø100µm
4 mil
FCN88G5A204-DC FCWN88G5A204-DC
96 24x24
Single Row
Daisy Chain
457µm
18 mil
12.7mm
500 mil
100~635µm
4~25 mil
36 Die
4" Tray
52 Die
5" Wafer
ø102µm
4 mil
FCN96G12.7A457-DC FCWN96G12.7A457-DC
112 28x28
Single Row
Daisy Chain
152µm
6 mil
5.08mm
200 mil
100~635µm
4~25 mil
36 Die
2" Tray
340 Die
5" Wafer
ø55µm
2.1 mil
FCN112L5A152-DC FCWN112L5A152-DC
ø86µm
3.3 mil
FCN112K5A152-DC FCWN112K5A152-DC
□105µm
4 Mil SQ
FCN112H5A152-DC FCWN112H5A152-DC
176 44x44
Single Row
Daisy Chain
102µm
4 mil
5.08mm
200 mil
100~635µm
4~25 mil
36 Die
2" Tray
340 Die
5" Wafer
□82µm
3.2 Mil SQ
FCN176J5A102-DC FCWN176J5A102-DC
Ø56µm
2.2 Mil
FCN176L5A102-DC FCWN176L5A102-DC
Ø30µm
1.2 Mil
FCN176M5A102-DC FCWN176M5A102-DC
176 44x44
Single Row
Daisy Chain
204µm
8 mil
10.16mm
400 mil
100~635µm
4~25 mil
49 die
4" Tray
81 Die
5" Wafer
ø102µm
4 mil
FCN176G10C204-DC FCWN176G10C204-DC
220 44x66
Single Row
Daisy Chain
204µm
8 mil
10 x 15mm
400x600 mil
100~635µm
4~25 mil
20 Die
4" Tray
50 Die
5" Wafer
ø102µm
4 mil
FCN220G10x15A204-DC FCWN220G10x15A204-DC
224 56x56
Single Row
Daisy Chain
152µm
6 mil
10.16mm
400 mil
100~635µm
4~25 mil
49 Die
4" Tray
81 Die
5" Wafer
ø55µm
2.1 mil
FCN224L10A152-DC FCWN224L10A152-DC
ø86µm
3.3 mil
FCN224K10A152-DC FCWN224K10A152-DC
□105µm
4 Mil SQ
FCN224K10A152-DC FCWN224K10A152-DC
352 88x88
Single Row
Daisy Chain
102µm
4 mil
10.16mm
400 mil
100~635µm
4~25 mil
49 Die
4" Tray
81 Die
5" Wafer
□82µm
3.2 Mil SQ
FCN352J10A102-DC FCWN352J10A102-DC -
Ø56µm
2.2 Mil
FCN352L10A102-DC FCWN352L10A102-DC
Note 1: Standard Die thickness 635um (25MIL)
Note 2: Thinning available: 500um (20MIL), 430um (17MIL), 360um (14MIL), 250um (10MIL), 200um (8MIL), 150um (6MIL), 100um (4MIL)
Note 3: Large die with Daisy Chain available: 10x10mm, 15x15mm, 20x20mm, 10x15mm and 15x20mm, others
Note 4: Full Array Daisy Chain die with pad counts up to 8000 pads
 
Stud Bump and Wire Bondable Die with Full Array Daisy Chain (Al98% Si1% Cu1%)
Nbr
Pads
Pad Matrix Pitch Die Size
(mm)
Die
Thickness
Waffle Tray
Qty
5" (125mm)
Wafer Qty
Bondable
Pad
Single Die
Order Number
Unsawn Wafer
Order Number
Quick View
317 18x18
Full Array
254µm
10 mil
5.08mm
200 mil
100~635µm
4~25 mil
36 Die
2" Tray
340 Die
5" Wafer
ø80µm
3.1 mil
FCN317G5A254-DC FCWN317G5A254-DC
ø100µm
4 mil
FCN317K5A254-DC FCWN317K5A254-DC
569 24x24
Full Array
204µm
8 mil
5.08mm
200 mil
100~635µm
4~25 mil
36 Die
2" Tray
340 Die
5" Wafer
ø55µm
2.1 mil
FCN569L5A204-DC FCWN569L5A204-DC
893 30x30
Full Array
152µm
6 mil
5.08mm
200 mil
100~635µm
4~25 mil
36 Die
2" Tray
340 Die
5" Wafer
ø45µm
1.8 mil
FCN893P5A152-DC FCWN893P5A152-DC
1268 36x36
Full Array
254µm
10 mil
10.2mm
200 mil
100~635µm
4~25 mil
49 Die
4" Tray
81 Die
5" Wafer
ø100µm
4 mil
FCN1268G10A254-DC FCWN1268G10A254-DC
Note 1: Standard Die thickness 635um (25MIL)
Note 2: Thinning available: 500um (20MIL), 430um (17MIL), 360um (14MIL), 250um (10MIL), 200um (8MIL), 150um (6MIL), 100um (4MIL)
Note 3: Large die with Daisy Chain available: 10x10mm, 15x15mm, 20x20mm, 10x15mm and 15x20mm, others
Note 4: Full Array Daisy Chain die with pad counts up to 8000 pads
 
   
PST Series - Thermal Test Die with Resistive Heaters
Nbr
Pads
Pad Matrix Pitch Die Size
(mm)
Die
Thickness
Waffle Tray
Qty
5" (125mm)
Wafer Qty
Bondable
Pad
Single Die
Order Number
Unsawn Wafer
Order Number
Photo Schematic
32 8x8
Perimeter Row
X=230µm
Y=230µm
2.5mm
100 mil
100~635µm
4~25 mil
100 Die
2" Tray
1600 Die
5" Wafer
ø102µm
4.0 mil
PST1-G2.5A PSTW1-G2.5A
□122µm
4.8 mil
PST1-B2.5A PSTW1-B2.5A
21 7x4
Perimeter Row
X=460µm
Y=690µm
3.81mm
150 mil
100~635µm
4~25 mil
64 Die
2" Tray
700 Die
5" Wafer
ø100µm
4.0 mil
PST2-G3.8A PSTW2-G3.8A
Ø127µm
5.5 mil
PST2-N3.8A PSTW2-N3.8A
□150µm
5.9 mil
PST2-C3.8A PSTW2-C3.8A
76 19x19
Perimeter Row
X=231µm
Y=231µm
5.08mm
200 mil
100~635µm
4~25 mil
36 Die
2" Tray
340 Die
5" Wafer
□120µm
4.7 mil
PST3-B5A PSTW3-B5A
48 14x10
Perimeter Row
X=381µm
Y=508µm
6.35mm
250 mil
100~635µm
4~25 mil
25 Die
2" Tray
236 Die
5" Wafer
Ø100µm
4.0 mil
PST4-G6.3A PSTW4-G6.3A
60 17x13
Perimeter Row
X=381µm
Y=508µm
7.8mm
306 mil
100~635µm
4~25 mil
64 Die
4" Tray
146 Die
5" Wafer
Ø182µm
7.2 mil
PST5-U7.8A PSTW5-U7.8A
82 22x18
Perimeter Row
X=381µm
Y=508µm
10mm
400 mil
100~635µm
4~25 mil
49 Die
4" Tray
80 Die
5" Wafer
□183µm
7.2 mil
PST6-D10A PSTW6-D10A
Note 1: Standard Die thickness 635um (25MIL)
Note 2: Thinning available: 500um (20MIL), 430um (17MIL), 360um (14MIL), 250um (10MIL), 200um (8MIL), 150um (6MIL), 100um (4MIL)
Note 3: Applications: Use PST series test die to determin thermal characteristics of semiconductor packages, such as Juntion to Case or Junction to Ambient. PST test dies incorporate a heating element and two independent methos for on-die temperature monitoring. A four pad layout allows Kelvin connections. A temperature monitoriing circuit uses a bridge network. PST4 ar larger chips include serial five-diode temperature sense network in all four corners of the die. Meets JEDEC specification EIA/JESD51-4. Power up to 2.5W per die.
Note 3: Stack Die: Multiple PST can be stacked in offset pryamid fashion for easy wire bonding. Thin to 127umm (5mils). Use 0.0381mm thick non-conductive die attach material between PST-2 to PST-4 and PST-4 to PST-6. Use electrically conductive die attach material between PST-6 and the substrate.
Note 4: Resistive Heaters: All PST series die have a dual resistive heater bus bars (connection Rs to Rf).
Note 5: Temperature Sense Network: All PST series die have serial five-diodes to sense temperature.
 
   

Wafer Box Cassette

(Closed) Wafer Shipper (Open)
Rotatable Model Rotatable Model
       
       
Silicon Die with Daisy Chain
Nbr
Pads
Description Pad Size Size (mm) Die
Thickness
Metalization
over SiO2
Tray Qty Part Number Click Photo
to Enlarge
8 pairs Daisy Chain 60 x 160µm 1.0 x 1.0mm
250µm  Al 1.0µm 100 TD8-1.0-DC
151008 (A2)
16 pairs Daisy Chain
32 Wire Bonds
60 x 160µm 2.5 x 2.5mm
250µm  Al 1.0µm 100 TD16-2.5-DC
152516 (B2)
24 pairs Daisy Chain
48 Wire Bonds
60 x 360µm 4.0 x 4.0mm
250µm  Al 1.0µm 64 TD24-4.0-DC
154024 (C3)

8-Inch Wafer
174024


TD24~208
DWG 154000 ALL
64 pairs Daisy Chain
128 Wire Bonds
60 x 360µm 8.5 x 8.5mm
250µm
~725µm 
Al 1.0µm 49 TD64-8-BG725-DC
140064

TD64-8-BG250-DC
150064
80 pairs Daisy Chain
160 Wire Bonds
60 x 360µm 12.856 x 12.856mm
250µm
~725µm 
Al 1.0µm 36 TD80-12.5-BG250-DC
140080

TD80-12.5-BG725-DC
154080
 
Silicon Die with Sqaure Pads
Nbr
Pads
Description Pad Size Size (mm) Die
Thickness
Metalization
over SiO2
Tray Qty Part Number Click Photo
to Enlarge
16 Square Pad 60µm SQ. 1.0 x1.0mm
250µm  Al 1.0µm
Ti 300Å
100 TD16-1.0-ISO
151016 (A1)
32 Square Pad 60µm SQ. 2.5 x 2.5mm
250µm  Al 1.0µm
Ti 300Å
100 TD32-2.5-ISO
152533 (B1)
48 Square Pad 60µm SQ. 4.0 x 4.0mm
250µm  Al 1.0µm
Ti 300Å
64pc 2" tray
196pc 4" Tray
TD48-4.0-ISO
154048 (C1)
48 Square Pad 100µm SQ. 4.1 x 4.1mm
250µm  Al 1.0µm
Ti 300Å
64pc 2" tray
196pc 4" Tray
TD48-4.1-BG250
2" tray 254148
4" tray 254148

Unsawn 8" Wafer 174148
Sawn 8" BG Wafer 244148
96 Square Pad 100µm SQ. 8.3 x 8.3mm
250µm  Al 1.0µm
Ti 300Å
49 TD96-8.3-BG250
4" tray 208296

Unsawn 8" Wafer 174148
Sawn 8" BG Wafer 248296
 
 
Silicon Die with Differential Pairs for RF/Microwave Parasitic Test
Nbr
Pads
Description Pad Size Size (mm) Die
Thickness
Metalization
over SiO2
Tray Qty Part Number Click Photo
to Enlarge
2 Pads
With Ground
Differential
Pair
Pad 60 x 160µm
Ground Plane
1000µm SQ.
1.0 x1.0mm
250µm  Al 1.0µm
Ti 300Å
100 TD2-1.0-DIF
151002 (A3)
2 Pads
With Ground
Differential
Pair
Pad 60 x 160µm
Ground Plane
2500µm SQ.
2.5 x 2.5mm
250µm  Al 1.0µm
Ti 300Å
100 TD2-2.5-DIF
152502 (B3)
2 Pads
With Ground
Differential
Pair
Pad 60 x 160µm
Ground Plane
4000µm SQ.
4.0 x 4.0mm
250µm  Al 1.0µm
Ti 300Å
64 TD2-4.0-DIF
151002 (A3)
 
 
Silicon Die with Full Metallization(Al or Au)
Nbr
Pads
Description Pad Size Size (mm) Die
Thickness
Metalization
over SiO2
Tray Qty Part Number Click Photo
to Enlarge
1 Large Pad Fully Metallized 1000µm SQ. 1.0 x1.0mm
250µm  Al 1.0µm
Ti 300Å
100 TD1-1.0-BG250-W
151001 (A4)
1 Large Pad Fully Metallized 1000µm SQ. 1.0 x1.0mm
500µm  Al 1.0µm
Ti 300Å
100~400 TD1-1.0-BG500-W
251001
1 Large Pad Fully Metallized 1000µm SQ. 1.0 x1.0mm
500µm  Au 1.0µm
Ti 200Å
100~400 TD1-1.0-Au-BG500-W
351001
1 Large Pad Fully Metallized 2000µm SQ. 2.0 x2.0mm
500µm  Al 1.0µm
Ti 300Å
100 TD1-2.0-BG500-W
152001
1 Large Pad Fully Metallized 2000µm SQ. 2.0 x2.0mm
500µm  Au 1.0µm
Ti 200Å
100 TD1-2.0-Au-BG500-W
352001
1 Large Pad Fully Metallized 2500µm SQ. 2.5 x 2.5mm
250µm  Al 1.0µm
Ti 300Å
100 TD1-2.5-BG250-W
152501 (B4)
1 Large Pad Fully Metallized 2500µm SQ. 2.5 x 2.5mm
500µm  Al 1.0µm
Ti 300Å
100 TD1-2.5-BG500-W
252501
1 Large Pad Fully Metallized 4000µm SQ. 4.0 x 4.0mm
250µm  Al 1.0µm
Ti 300Å
64 TD1-4.0-BG250-W
154001 (C4)
1 Large Pad Fully Metallized 5000µm SQ. 5.0 x 5.0mm
500µm  Al 1.0µm
Ti 300Å
144 TD1-5.0-BG500-P
105001
1 Large Pad Fully Metallized 6000µm SQ. 6.0 x 6.0mm
500µm  Al 1.0µm
Ti 300Å
121 TD1-6.0-BG500-P
106001
1 Large Pad Fully Metallized 10000µm SQ. 10.0 x 10.0mm
500µm  Al 1.0µm
Ti 300Å
49 TD1-10.0-BG500-P
109901
Back grind die thickness 200~725um.
Rectangular die available  • All pad sizes available.
Packaging Suffix: 2" Waffle Pack (W) • 4" Waffle Pack (P)  • Wafer Ring (NT8) • Tape and Reel (E) • JEDEC Tray (T)
Conductive Metallization available: Al or Au
 
 
Silicon Die with 3-Rows of Bonding Pads
Total I/O
Pads
Perimeter
Rows
Pad Size
µm
Size (mm) Die
Thickness
Metalization
over SiO2
Tray Qty Part Number Click Photo
to Enlarge
380 3-Rows 50SQ,90SQ
175x55
5x3.25mm
300,500,750µm Al 1.0µm 144 TD380-5x3.2-BG300P
TD380-5x3.2-BG500P
TD380-5x3.2-BG750P
Back grind die thickness 250~750um.
Seed Layer Ti 300Å
Other Sizes available  • Custom pad sizes and geometries available.
Packaging Suffix: 2" Waffle Pack (W) • 4" Waffle Pack (P)  • Wafer Ring (NT12) • Tape and Reel (E) • JEDEC Tray (T)

Conductive Metallization available: Al, AlS, Al-Si-Cu, Al-Cu, Al-Si, Cu, Ru, Pd, Pt, Au, Ag, Ni, Co, a-Si, and NiSi
Refractory Metallization available: Ta, TaN, Ti, TiN, TiW, W, WN, WSi, Cr
 
 
JEDEC Moisture Sensitivity Level MSL-1
 
About Dielectric Materials:
Silicon-dioxide insulator SiO2 k = 4.2 • Application: Gold and aluminum wire bonding
Low-k Dielectric k < 3.0 • Application: Copper wire bonding and ultra-fine pitch pads < 90nm

Competing Low-k process technologies:
1) Chemical vapor deposited (CVD) inorganic films such as carbon-doped oxides (SiOC) k~2.8
2) Spun-on dielectrics (SOD) - polymer organic films k 2.5~2.8

Challenge of bonding to pads with Low-k dielectrics:
Spongy dielectric underlayer layer causes top metallization layer to cup and deflect, thus lowering optimal bondability.
Package Selector
Test Die Part Numbering System
TD 16 - 2.5 - DC - BG250 W
Die Type Nbr Pads   Die Size (mm)   Patterns   Backgrind
Option
Packaging
Options
TD=Singulated Die

TDW = Sawn Wafer

TDWU = Unsawn Wafer

FA = Full Array
Single Die
1=Fully Plated

2=Differential Pair

3~999=Bond Pads
  Square Example
1.0 = 1.0x1.0mm
2.5 = 2.5x2.5mm
4.0 = 4.0x4.0mm
Other sizes available


Rectangular Example:
5x3= X5mm x Y3mm
3x5= X3mm x Y5mm
Other sizes available
  DC = Daisy Chain

BUS = Fully Plated

ISO = Isolated Pads

DIF = Differential Pair

FA = Full Array

Au = Gold Backing

Blank = Isolated
or Fully Plated
  BG### = um thickness

Example:
BG250 = 250um = 10mils

Blank = Undefined
Single Die:
W = 2" Waffle Pack
P = 4" Waffle Pack
T = JEDEC Tray
E = Tape & Reel

Unsawn Wafer:
C = Cassette
J = Jar/Canister

Sawn Wafer:
NH8 = Plastic Hoop 8" Ring (Non-UV)
UH8 = Plastic Hooop 8" Ring (UV Tape)
NT8 = Dicing Tape 8" Ring
NH8 = Plastic Hoop 8" Ring
NT12 = Dicing Tape 12" Ring
UV8 = UV Tape 8" Ring
UV12 = UV Tape 12" Ring
Aluminum Pads: 1st Layer: SiO2 - 3000Å   •   2nd Layer: Ti - 300Å thick   •   3rd Layer: Al - 1.0µm thick  •   ( 1.0µm = 10000Å = 10KÅ)
Copper and other pad platings available
DBG: Dice before Gring process available for thin die 50um and 100um thick.
Dimensional tolerance: ±5um and ±10um available on request.
Die Daisy Chain Numbering System
   1       5       10       08   
Variations Packaging Size I/O
1 = Standard

2~9 = Variations
Thickness
Plating
Materials
etc.
Single Die:
0 = 4" Waffle Tray (P)
5 = 2" Waffle Tray (W)


Sawn Wafer Disco DTF-2-8-1 Format:
3 = UV Tape & Metal Frame ("UD") FF108  •   FF123
4 = Non-UV & Metal Frame ("ND") FF108  •   FF123
2 = Non-UV & Plastic Frame ("PD") FFP7290-11

Sawn Wafer K&S 350-104 Format:
1 = UV Tape & Metal Frame ("UK") FF105  •   FF123
8 = Non-UV & Metal Frame ("NK") FF105  •   FF123
9 = Non-UV & Plastic Frame ("PK") FFP7290-14

6 = Non-UV Wafer Expansion Hoops ("H")

Unsawn Wafer Format:
7 = Clam Shell, Jar, etc
10 = 1.0x1.0mm

25 = 2.5x2.5mm

40 = 4.0x4.0mm

Other Sizes Available
01 = 1 pad

08 = 8 pads
16 = 16 pads
24 = 24 pads
48 = 48 pads
99 = 100 pads
 
 
 
FCN Daisy Chain Die Part Numbering System
FCN 64 N 5 A 254 BG250 -DC
Bumpless
Flip-Chip
Nbr
Bond Pads
Passivation
Opening
Die Size (mm) Pad
Plating
Pitch (um) Optional Thickness Daisy Chain
FCN = Single Die

FCWN = Wafer
48~893 Round Opening
M = Ø30µm
P = Ø45µm
L = Ø55µm
K = Ø80~95µm
G = Ø100µm
N = Ø118µm
U = Ø150µm

Square Opening
J = □82µm
H = □105µm
5 = 5.08mm (200mil)
10 = 10.16mm (400mil)
15 = 15.24mm (600mil)
20 = 20.32mm (800mil)
A = AL98% Cu1% Si1% 102µm = 4mil
152µm = 6mil
204µm = 8mil
254µm = 10mil
457µm = 18mil
BG250 = 10mil
BG200 = 8mil
Blank=635um
Other Available
-DC = Daisy Chain
 
 
FCN Daisy Chain Numbering System
   6       3       16       1       0   
Bumpless
Flip Chip
Pad Pitch Pad Matrix Variation Passivation
Opening
6 = Single Die
Bumpless
Flip Chip
Pad Pitch
3 = 254µm (10mil)
4 = 100µm (4mil)
6 = 152µm (6mil)
8 = 200µm (8mil)
9 = 457µm (18mil)
Perimeter Pads
12 = 48 pads
16 = 64 pads
22 = 88 pads
24 = 96 pads
28 = 112 pads
32 = 128 pads
36 = 144 pads
44 = 176 pads
48 = 192 Pads
56 = 192/224
64 = 192/256
66 = 264 pads
84 = 336 pads
88 = 352 pads
90 = 528 pads
94 = 448 pads
99 = 704 pads

Full Array
18 = 317 pads
24 = 569 pads
30 = 893 pads
36 = 1268 pads
48 = 2384 pads
54 = 2853 pads
60 = 3572 pads
72 = 5072/5121
96 = 9104 pads
99 = 14288 pads
Die Thickness:
0 = 635µm (25mil)
1 = 250µm (10mil)
2 = 200µm (8mil)
3 = 360µm (14mil)
4 = 430µm (17mil)
5 = 530µm (21mil)
6 = 150µm (6mil)
7 = 100µm (4mil)
Other Thickness Available
FCN48-457um
0 = Ø102µm

FCN64-254um
0 = Ø118µm 10KÅ
1 = Ø118µm 24KÅ
2 = Ø95µm
3 = Ø150µm

FCN88-204um
0 = Ø100µm
1 = Ø80µm

FCN112-152um
0 = SQ105µm
1 = Ø86µm
2 = Ø55µm

FCN176-102um
0 = SQ82µm
1 = Ø30µm
2 = Ø56µm

FCN317-254um
0 = Ø80µm
1 = Ø100µm

FCN569-204um
0 = Ø55µm

FCN893-152um
0 = Ø45µm

 
        
 
Copper (Cu) Wire Bonding  •   Gold (Au) Wire Bonding  
 
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95 Highway 22 W
Milledgeville, GA 31061, USA
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